JPS625346B2 - - Google Patents

Info

Publication number
JPS625346B2
JPS625346B2 JP55016152A JP1615280A JPS625346B2 JP S625346 B2 JPS625346 B2 JP S625346B2 JP 55016152 A JP55016152 A JP 55016152A JP 1615280 A JP1615280 A JP 1615280A JP S625346 B2 JPS625346 B2 JP S625346B2
Authority
JP
Japan
Prior art keywords
region
semiconductor region
type semiconductor
transistor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55016152A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56112751A (en
Inventor
Susumu Yasaka
Masami Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP1615280A priority Critical patent/JPS56112751A/ja
Priority to GB8103251A priority patent/GB2069787B/en
Priority to CA000370458A priority patent/CA1154172A/en
Priority to DE3104743A priority patent/DE3104743C2/de
Publication of JPS56112751A publication Critical patent/JPS56112751A/ja
Publication of JPS625346B2 publication Critical patent/JPS625346B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/642Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04126Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in bipolar transistor switches

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP1615280A 1980-02-13 1980-02-13 Switching element Granted JPS56112751A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1615280A JPS56112751A (en) 1980-02-13 1980-02-13 Switching element
GB8103251A GB2069787B (en) 1980-02-13 1981-02-03 Semiconductor switching device
CA000370458A CA1154172A (en) 1980-02-13 1981-02-10 Semiconductor switching device
DE3104743A DE3104743C2 (de) 1980-02-13 1981-02-11 Halbleiter-Schaltanordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1615280A JPS56112751A (en) 1980-02-13 1980-02-13 Switching element

Publications (2)

Publication Number Publication Date
JPS56112751A JPS56112751A (en) 1981-09-05
JPS625346B2 true JPS625346B2 (en]) 1987-02-04

Family

ID=11908523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1615280A Granted JPS56112751A (en) 1980-02-13 1980-02-13 Switching element

Country Status (4)

Country Link
JP (1) JPS56112751A (en])
CA (1) CA1154172A (en])
DE (1) DE3104743C2 (en])
GB (1) GB2069787B (en])

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126959A (en) * 1980-03-12 1981-10-05 Nec Corp Semiconductor device
JPS62198148A (ja) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd 半導体装置
DE3631957A1 (de) * 1986-09-19 1988-03-31 Siemens Ag Schaltungsanordnung zum ausschalten von transistoren in darlington-schaltung
GB9127476D0 (en) * 1991-12-30 1992-02-19 Texas Instruments Ltd A semiconductor integrated circuit
JPH05243259A (ja) * 1992-03-03 1993-09-21 Mitsubishi Electric Corp バイポーラトランジスタ及びその製造方法並びにダーリントントランジスタ及びその製造方法

Also Published As

Publication number Publication date
GB2069787B (en) 1985-01-03
CA1154172A (en) 1983-09-20
DE3104743C2 (de) 1983-12-22
DE3104743A1 (de) 1982-01-07
JPS56112751A (en) 1981-09-05
GB2069787A (en) 1981-08-26

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